Průmyslové paměti

125010000028 4GB DDR3 1333 SDRAM UDIMM APACER:78.B1GDE.4010C

DDR3 1333 SDRAM ELPIDA APACER:78.B1GDE.AF1 DOUGLE SIDE 256Mx8(16) 4G 240PIN W/O ECC & REG H:30mm

125010619020 CERVOZ RAM SO-DIMM 4GB DDR4 2133MHz 0~70°C (CIR-S4SUSS2104G)

125011600040 8GB DDR4 2133 MHz, SO-DIMM APACER -40~85°C, 75.CA4GR.G000B

8GB DDR4 2133 MHz, SO-DIMM APACER -40~85°C, 75.CA4GR.G000B, 1024x8, 1R, SA-B, CL15

125011610002 CERVOZ RAM SO-DIMM 512MB DDR1 400MHz 0~70°C (CIR-S1SUMD40512)

125011610003 CERVOZ RAM SO-DIMM 512MB DDR1 400MHz 0~70°C (CIR-S1SUPD40512)

CERVOZ RAM SO-DIMM 512MB DDR1 400MHz 0~70°C (CIR-S1SUPD40512)

125011613545 CERVOZ RAM SO-DIMM 16B DDR4 2666z, 40~85°C (CIR-W4SUSW2616G)

SO-DIMM DDR4 16GB/CIR-W4SUSW2616G 260-PIN, PC2666, 1GX8 DR, SAMSUNG, 1,2V, WIDE TEMP

16GB DDR3L 2133 MHz, SO-DIMM APACER -40~85°C, 75.DA4GR.G000B

16GB DDR4 2133 Industrial DIMM Apacer (78.D1GMW.4010B)

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 16GB 1024x8 2R SA CL15

16GB DDR4 2400 Industrial DIMM Apacer (78.D2GF2.4010B)

SO DIMM Socket (1.2V) 16 GB, Dual Channel, DDR4–2400, 16GB, 1024x8, 2R, SA, CL17

16GB DDR4, 2133 MHz, SO-DIMM, APACER, 0-70°C, 78.D2GF6.4010B

1GB DDR SO-DIMM 200-pin,-40~ 85°C, Indus.G Apacer, 75.063AS.

75.063AS.G030C DDR 400 1GB Ind. SODIMM 64x8 2R MC-J CL3 DDR SO-DIMM (-40/+85)

1GB DDR SO-DIMM 400/333 PM, APACER, 78.02G50.443

1GB DDR SO-DIMM 400/333 PM, APACER, 78.02G50.443

1GB DDR UDIMM, PC-3200, 400 MHz, APACER, 77.G1136.44G

1GB DDR UDIMM, PC-3200, 400 MHz, APACER, 77.G1136.44G

1GB DDR2-800 (16 ch)Apacer 78.01G1A.4040C

1GB SO DIMM 64*8, Apacer 78.02G49.403

SO DIMM DDR 333 1GB 64*8, Apacer 78.02G49.403

2GB DDR2-800 SO-DIMM APACER, 128x8 2R CL6, 78.A2G86.405

2GB DDR2-800 SO-DIMM APACER, 128x8 2R Samsung CL6 P/N: 78.A2G86.405

2GB DDR3 SDRAM 1066MHz, 240PIN HYNIX APACER 78.A1GDJ.AF00C

DDR3 1066 SDRAM 2G 240PIN HYNIX APACER:78.A1GDJ.AF00C DOUBLE SIDE 256Mx8(16) 2G 240PIN W/O ECC & REG H:30mm

2GB DDR3 1066 SDRAM HYNIX APACER:78.A1GC3.AF1

2GB DDR3 1066 SDRAM HYNIX APACER:78.A1GC3.AF1 DOUBLE SIDE 128Mx8(16) 2G 240PIN W/O ECC & REG H:30mm

2GB DDR3 1333 SO-DIMM APACER -40~95°C, (75.A83CG.G010C)

Apacer 75.A83CG.G010C is a 256M x 64 DDR3 SDRAM (Synchronous DRAM) SO-DIMM. Extended temperature -40~95°C. This high-density memory module consists of 8 pieces 256M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM. The

2GB DDR3 1333 SO-DIMM APACER 78.A2GC9.AF0

DOUBLE SIDE 256Mx8(8) 2GB W/O ECC & REG 204PIN H:30mm

2GB DDR3 1600 SDRAM, 240 pin, APACER:78.A1GE3.4000C

1600: 78.A1GE3.4000C- DDR3 DIMM 12800-11 256x8 2GB SA G, 240 pin

2GB DDR3 1600MHz U-DIMM 256x8 CL11 Hynix, 78.A1GE3.AF00C

2GB DDR3 1600 U-DIMM 256x8 CL11 Hynix, 78.A1GE3.AF00C

2GB DDR3 SDRAM 128x8 8500-7 SA G APACER:78.A1GC3.401

2GB DDR3L SODIMM APACER 12800-11 256x8 SA-F Ind. 1.35V

2GB DDR3L,1600MHz (1.35V) SO-DIMM, Apacer, 0-70°C, 78.A2GCR.4000C

DDR3 1.35V SO-DIMM: 78.A2GCR.4000C DDR3 1600 2GB SODIMM 256x8 1R SA CL11

2GB DDR3L,1600MHz (1.35V) SO-DIMM, Samsung, 0-70°C

For bay trail, the DDR3L (1.35V) Transcend: TS256MSK64W6N

4GB DDR3 1333 SDRAM HYNIX APACER:78.B1GDE.AF1

DDR3 1333 SDRAM ELPIDA APACER:78.B1GDE.AF1 DOUGLE SIDE 256Mx8(16) 4G 240PIN W/O ECC & REG H:30mm

4GB DDR3 1333 SO-DIMM APACER -40~95°C, (75.B83CG.G010C)

75.B83CG.G010C 4GB 256x8 2R MC-K CL9

4GB DDR3 1333 SO-DIMM APACER:78.B2GC9.AF1

78.B2GC9.AF1 DDR3 SODIMM 10600-9 256x8 4GB HYN G

4GB DDR3 1600 ECC U-DIMM 512x8 4GB 1R CL11 - 78.B1GER.4020C

4GB DDR3L (1.35V) 1600MHz, SDRAM/U-DIMM 512x8 CL11 Apacer, 78.B1GG2.4000C

78.B1GG2.4000C

4GB DDR3L 1066/1333 SO-DIMM APACER,1.35V,-40~95°C,75.B93E2.G040B

4GB DDR3L 1333 (1.35V) SO-DIMM APACER:78.B2GCY.4000C

4GB DDR3L,1600MHz (1.35V) SO-DIMM, APACER, 0-70°C

4G DDR3L,1600MHz (1.35V) SO-DIMM, Apacer, standard temp 0-70°C. Samsung chips

4GB DDR4 2133 Industrial DIMM Apacer (78.B1GM3.4050B)

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 4GB 512x8 1R SA CL15

4GB DDR4 2133 Industrial U-DIMM Apacer

DDR4 Indus. U-DIMM, Freq. 2133, Cpacity: 4GB, Config: 512x8, Rank 2R; Chip: SA-E, CL15

4GB DDR4, 2133 MHz, SO-DIMM, APACER, 0-70°C

4GB RAM pro NDIS 729BM04G16X00

512MB DDR SO-DIMM -40~85°C, 64x8 MC-J Indus.G Apacer, 75.963AT.G020C

512MB SO DIMM 64*8 Apacer 77.G1720.400

SODIMM DDR266 512MB 64*8 Apacer 77.G1720.400

8GB DDR3 1333 ECC PC10600 (78.C1GEQ.4030C)

78.C1GEQ.4030C DDR3 1333 8GB 512x8

8GB DDR3 1333 SO-DIMM APACER -40~95°C, 75.C93CG.G020C

75.C93CG.G020C 8GB 512x8 2R MC-E /EN"75.C93CG.G020C 8GB 512x8 2R MC-E " http-equiv=Content-Type> body, p { font-family: Tahoma, sans-serif;font-size: 10pt; }pre { font-family: monos

8GB DDR3 1333 SO-DIMM APACER:78.C2GCM.4030C

78.C2GCM.4030C DDR3 1333 8GB SODIMM 512x8 2R SA CL9 Samsung chips

8GB DDR3 1600 ECC U-DIMM 512x8 8GB 2R Hynix CL11 - 78.C1GER.

Server ECC RAM 78.C1GER.AF30C - DDR3 1600 ECC U-DIMM 512x8 8GB 2R Hynix CL11

8GB DDR3 1600MHz, SDRAM/U-DIMM 512x8 CL11 Apacer

DDR3 1600 8GB Unbuffered SDRAM Samsung chip solution

8GB DDR3L (1.35V) 1600MHz, SDRAM/U-DIMM 512x8 CL11 Apacer, 78.C1GG2.4010C

DDR3L 1600MHz 8GB Unbuffered SDRAM Samsung chip solution DDR3L 1600 8GB UDIMM 512x8 2R SA CL11

8GB DDR3L 1333 SO-DIMM APACER, 0~70°C, 78.C2GCY.4030C

78.C2GCY.4030C - 8GB 512x8 2R Samsung chips CL9

8GB DDR3L 1600 SO-DIMM APACER -40~85°C, 75.C93E2.G040B

8GB DDR3L 1600 SO-DIMM 2Rx8 (512Mx8), I-grade Unbuffered, Using Promos 512Mx8 (-40 to 85°C)

8GB DDR4 2133 Industrial DIMM Apacer (78.C1GMW.4050B)

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 8GB 1024x8 1R SA CL15

8GB DDR4 2133 Industrial U-DIMM Apacer

DDR4 Indus. U-DIMM, Freq. 2133, Cpacity: 8GB, Config: 1024x8, Rank 1R; Chip: SA-B, CL15