Other Components and Accessories

78.C1GEQ.4030C DDR3 1333 8GB 512x8

DDR4 Indus. U-DIMM, Freq. 2133, Cpacity: 8GB, Config: 1024x8, Rank 1R; Chip: SA-B, CL15

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 4GB 512x8 1R SA CL15

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 8GB 1024x8 1R SA CL15

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 16GB 1024x8 2R SA CL15

SO DIMM Socket (1.2V) 16 GB, Dual Channel, DDR4–2400, 16GB, 1024x8, 2R, SA, CL17

PN:CIR-S2DUMG6602G, PIN: 240, IC brand: MICRON, IC organisation: 128Mx8, Rank: Dual, Speed: 667 MHz, Density: 2GB, Voltage: 1.8V

Part No. PIN IC Brand IC Organization Rank Speed Density Voltage CIR-S4SUSV2104G 260 Samsung 512Mx8 Single 2133 4GB 1.2V

Paměťový modul typu DDR4 SODIMM, který má kapacitu 4 GB a rychlost 3200 MT/s

DDR4 Unbuffered SO-DIMM

75.063AS.G030C DDR 400 1GB Ind. SODIMM 64x8 2R MC-J CL3 DDR SO-DIMM (-40/+85)