Industrial memories

1GB DDR UDIMM, PC-3200, 400 MHz, APACER, 77.G1136.44G

1GB DDR SO-DIMM 400/333 PM, APACER, 78.02G50.443

SO DIMM DDR 333 1GB 64*8, Apacer 78.02G49.403

DOUBLE SIDE 256Mx8(8) 2GB W/O ECC & REG 204PIN H:30mm

SODIMM DDR266 512MB 64*8 Apacer 77.G1720.400

1600: 78.A1GE3.4000C- DDR3 DIMM 12800-11 256x8 2GB SA G, 240 pin

2GB DDR3 1066 SDRAM HYNIX APACER:78.A1GC3.AF1 DOUBLE SIDE 128Mx8(16) 2G 240PIN W/O ECC & REG H:30mm

DDR3 1333 SDRAM ELPIDA APACER:78.B1GDE.AF1 DOUGLE SIDE 256Mx8(16) 4G 240PIN W/O ECC & REG H:30mm

78.C2GCM.4030C DDR3 1333 8GB SODIMM 512x8 2R SA CL9 Samsung chips

DDR3 1.35V SO-DIMM: 78.A2GCR.4000C DDR3 1600 2GB SODIMM 256x8 1R SA CL11

4G DDR3L,1600MHz (1.35V) SO-DIMM, Apacer, standard temp 0-70°C. Samsung chips

78.C2GCY.4030C - 8GB 512x8 2R Samsung chips CL9

DDR3 1066 SDRAM 2G 240PIN HYNIX APACER:78.A1GDJ.AF00C DOUBLE SIDE 256Mx8(16) 2G 240PIN W/O ECC & REG H:30mm

2GB DDR3 1600 U-DIMM 256x8 CL11 Hynix, 78.A1GE3.AF00C

DDR3 1600 8GB Unbuffered SDRAM Samsung chip solution

78.B1GG2.4000C

DDR3L 1600MHz 8GB Unbuffered SDRAM Samsung chip solution DDR3L 1600 8GB UDIMM 512x8 2R SA CL11

Server ECC RAM 78.C1GER.AF30C - DDR3 1600 ECC U-DIMM 512x8 8GB 2R Hynix CL11

78.C1GEQ.4030C DDR3 1333 8GB 512x8

DDR4 Indus. U-DIMM, Freq. 2133, Cpacity: 4GB, Config: 512x8, Rank 2R; Chip: SA-E, CL15

DDR4 Indus. U-DIMM, Freq. 2133, Cpacity: 8GB, Config: 1024x8, Rank 1R; Chip: SA-B, CL15

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 4GB 512x8 1R SA CL15

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 8GB 1024x8 1R SA CL15

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 16GB 1024x8 2R SA CL15

SO DIMM Socket (1.2V) 16 GB, Dual Channel, DDR4–2400, 16GB, 1024x8, 2R, SA, CL17

PN:CIR-S2DUMG6602G, PIN: 240, IC brand: MICRON, IC organisation: 128Mx8, Rank: Dual, Speed: 667 MHz, Density: 2GB, Voltage: 1.8V

Part No. PIN IC Brand IC Organization Rank Speed Density Voltage CIR-S4SUSV2104G 260 Samsung 512Mx8 Single 2133 4GB 1.2V

Paměťový modul typu DDR4 SODIMM, který má kapacitu 4 GB a rychlost 3200 MT/s

DDR4 Unbuffered SO-DIMM

75.063AS.G030C DDR 400 1GB Ind. SODIMM 64x8 2R MC-J CL3 DDR SO-DIMM (-40/+85)

Apacer 75.A83CG.G010C is a 256M x 64 DDR3 SDRAM (Synchronous DRAM) SO-DIMM. Extended temperature -40~95°C. This high-density memory module consists of 8 pieces 256M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM. The

75.B83CG.G010C 4GB 256x8 2R MC-K CL9

75.C93CG.G020C 8GB 512x8 2R MC-E /EN"75.C93CG.G020C 8GB 512x8 2R MC-E " http-equiv=Content-Type>

8GB DDR3L 1600 SO-DIMM 2Rx8 (512Mx8), I-grade Unbuffered, Using Promos 512Mx8 (-40 to 85°C)

8GB DDR4 2133 MHz, SO-DIMM APACER -40~85°C, 75.CA4GR.G000B, 1024x8, 1R, SA-B, CL15

CERVOZ RAM SO-DIMM 512MB DDR1 400MHz 0~70°C (CIR-S1SUPD40512)

204 pin, Samsung čipy, 256Mx8, rychlost 1333 MHz, kapacita 2GB, 1.5V/1.35V

204 pin, Samsung čipy, 512Mx8, dual rank, rychlost 1600 MHz, kapacita 8GB, 1.35V

204 pin, Samsung čipy, 512Mx8, dual rank, rychlost 1333 MHz, kapacita 8GB, 1.35V

204pin Samsung 512Mx8 Single 1600 4GB 1.5V/1.35V

Cervoz Industrial RAM | Wide Temperature Series (TCASE: -40 ~ +85°C)

DDR4 SO-DIMM je kompaktní paměťový modul, s rychlostí 3200MT/s. Skvěle se hodí pro jakoukoli vestavěnou, dohledovou a automatizační sestavu.

Průmyslová paměť - Unbuffered SO-DIMM

SO-DIMM DDR4 16GB/CIR-W4SUSW2616G 260-PIN, PC2666, 1GX8 DR, SAMSUNG, 1,2V, WIDE TEMP

CERVOZ 8GB DDR4 2666MHz SO-DIMM -40~85°C, CIR-W4SUSW2608G