Operační paměti pro průmysl

1GB DDR UDIMM, PC-3200, 400 MHz, APACER, 77.G1136.44G

1GB DDR SO-DIMM 400/333 PM, APACER, 78.02G50.443

SO DIMM DDR 333 1GB 64*8, Apacer 78.02G49.403

DOUBLE SIDE 256Mx8(8) 2GB W/O ECC & REG 204PIN H:30mm

SODIMM DDR266 512MB 64*8 Apacer 77.G1720.400

1600: 78.A1GE3.4000C- DDR3 DIMM 12800-11 256x8 2GB SA G, 240 pin

2GB DDR3 1066 SDRAM HYNIX APACER:78.A1GC3.AF1 DOUBLE SIDE 128Mx8(16) 2G 240PIN W/O ECC & REG H:30mm

DDR3 1333 SDRAM ELPIDA APACER:78.B1GDE.AF1 DOUGLE SIDE 256Mx8(16) 4G 240PIN W/O ECC & REG H:30mm

78.C2GCM.4030C DDR3 1333 8GB SODIMM 512x8 2R SA CL9Čipy Samsung

DDR3 1.35V SO-DIMM: 78.A2GCR.4000C DDR3 1600 2GB SODIMM 256x8 1R SA CL11

4G DDR3L,1600MHz (1.35V) SO-DIMM, Apacer, standardní teplota 0-70°C. Čipy Samsung

78.C2GCY.4030C- 8GB512x8 2R čipy Samsung CL9

DDR3 1066 SDRAM 2G 240PIN HYNIX APACER:78.A1GDJ.AF00C DOUBLE SIDE 256Mx8(16) 2G 240PIN W/O ECC & REG H:30mm

2GB DDR3 1600 U-DIMM 256x8 CL11 Hynix, 78.A1GE3.AF00C

Čipové řešení Samsung DDR3 1600 8GB Unbuffered SDRAM

78.B1GG2.4000C

Čipové řešení Samsung DDR3L 1600MHz 8GB Unbuffered SDRAMDDR3L 1600 8GB UDIMM 512x8 2R SA CL11

Server ECC RAM 78.C1GER.AF30C - DDR3 1600 ECC U-DIMM 512x8 8GB 2R Hynix CL11

78.C1GEQ.4030C DDR3 1333 8GB 512x8

DDR4 Indus. U-DIMM, Freq. 2133, Cpacity: 4GB, Config: 512x8, Rank 2R; Chip: SA-E, CL15

DDR4 Indus. U-DIMM, Freq. 2133, Cpacity: 8GB, Config: 1024x8, Rank 1R; Chip: SA-B, CL15

288-pin 2133 MHz Dual-Channel DDR4 SDRAM unbuffered DIMM DDR4 2133 4GB 512x8 1R SA CL15

288-pinová dvoukanálová paměť DDR4 SDRAM 2133 MHz bez vyrovnávací paměti DIMMDDR4 2133 8GB 1024x8 1R SA CL15